IRGB6B60K |
RFQ for IRGB6B60K Required Field |
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| Technical/Catalog Information | IRGB6B60KDPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 13A |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 5A |
| Power - Max | 90W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGB6B60KDPBF IRGB6B60KDPBF |
| Product | Manufacturers | Pack | D/C |
| IRGB6B60K | - | TO-220 | 08+ |
Features |
| • Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient. |
| SYMBOL | PARAMETER | Value | UNIT |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25°C | Continuous Collector Current | 13 | A |
| IC @ TC = 100°C | Continuous Collector Current | 7.0 | |
| ICM | Pulsed Collector Current | 26 | |
| ILM | Clamped Inductive Load Current | 26 | |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| PD @ TC = 25°C | Maximum Power Dissipation | 90 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 36 | |
| TJ | Operating Junction and | -55 to +150 | °C |
| TSTG | Storage Temperature Range | ||
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) |
